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1 Ergebnisse
1
Influence of Capping Layer on Threshold Voltage for HKMG Fi..:
Cai, Han-Lun
;
Li, Run-Ling
;
Li, Zhao-Yang
...
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 4810-4814 , 2022
Link:
https://doi.org/10.1109/ted.2022.3191993
RT Journal T1
Influence of Capping Layer on Threshold Voltage for HKMG FinFET With Short Channel
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3191993&Exemplar=1&LAN=DE A1 Cai, Han-Lun A1 Li, Run-Ling A1 Li, Zhao-Yang A1 Li, Zhong-Hua A1 Jiang, Yu-Long A1 Lu, Fang PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 69 IS 9 SP 4810 OP 4814 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3191993 DO https://doi.org/10.1109/ted.2022.3191993 SF ELIB - SuUB Bremen
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