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1 Ergebnisse
1
Fowler–Nordheim Stress-Induced Degradation of Buried-Channe..:
Choi, Sungju
;
Yang, Ga Won
;
Lee, Sangwon
...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 48-52 , 2023
Link:
https://doi.org/10.1109/ted.2022.3221028
RT Journal T1
Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3221028&Exemplar=1&LAN=DE A1 Choi, Sungju A1 Yang, Ga Won A1 Lee, Sangwon A1 Park, Jingyu A1 Kim, Changwook A1 Park, Jun A1 Choi, Hyun-Seok A1 Lee, Namhyun A1 Kim, Gang-Jun A1 Kim, Yoon A1 Kang, Myounggon A1 Kim, Changhyun A1 Bae, Jong-Ho A1 Kim, Dae Hwan PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 1 SP 48 OP 52 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3221028 DO https://doi.org/10.1109/ted.2022.3221028 SF ELIB - SuUB Bremen
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