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1 Ergebnisse
1
Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-..:
Yang, Tae Jun
;
Kim, Je-Hyuk
;
Ryoo, Chang II
...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 121-126 , 2023
Link:
https://doi.org/10.1109/ted.2022.3223642
RT Journal T1
Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3223642&Exemplar=1&LAN=DE A1 Yang, Tae Jun A1 Kim, Je-Hyuk A1 Ryoo, Chang II A1 Myoung, Seung Joo A1 Kim, Changwook A1 Baeck, Ju Heyuck A1 Bae, Jong-Uk A1 Noh, Jiyong A1 Lee, Seok-Woo A1 Park, Kwon-Shik A1 Kim, Jeom-Jae A1 Yoon, Soo-Young A1 Kim, Yoon A1 Kim, Dae Hwan PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 1 SP 121 OP 126 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3223642 DO https://doi.org/10.1109/ted.2022.3223642 SF ELIB - SuUB Bremen
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