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1 Ergebnisse
1
Analysis of Breakdown-Voltage Increase on SiC Junction Barr..:
Jin, Fu-Yuan
;
Chen, Po-Hsun
;
Hung, Wei-Chun
...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 191-195 , 2023
Link:
https://doi.org/10.1109/ted.2022.3223645
RT Journal T1
Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3223645&Exemplar=1&LAN=DE A1 Jin, Fu-Yuan A1 Chen, Po-Hsun A1 Hung, Wei-Chun A1 Hung, Wei-Chieh A1 Chang, Chin-Han A1 Ciou, Fong-Min A1 Lin, Yu-Shan A1 Chang, Kai-Chun A1 Lin, Yun-Hsuan A1 Kuo, Ting-Tzu A1 Chen, Kuan-Hsu A1 Yeh, Chien-Hung A1 Chang, Ting-Chang PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 1 SP 191 OP 195 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3223645 DO https://doi.org/10.1109/ted.2022.3223645 SF ELIB - SuUB Bremen
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