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1 Ergebnisse
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Using Gate Leakage Conduction to Understand Positive Gate B..:
Tang, Shun-Wei
;
Bakeroot, Benoit
;
Huang, Zhen-Hong
...
IEEE Transactions on Electron Devices. 70 (2023) 2 - p. 449-453 , 2023
Link:
https://doi.org/10.1109/ted.2022.3231566
RT Journal T1
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3231566&Exemplar=1&LAN=DE A1 Tang, Shun-Wei A1 Bakeroot, Benoit A1 Huang, Zhen-Hong A1 Chen, Szu-Chia A1 Lin, Wei-Syuan A1 Lo, Ting-Chun A1 Borga, Matteo A1 Wellekens, Dirk A1 Posthuma, Niels A1 Decoutere, Stefaan A1 Wu, Tian-Li PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 2 SP 449 OP 453 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3231566 DO https://doi.org/10.1109/ted.2022.3231566 SF ELIB - SuUB Bremen
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