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1 Ergebnisse
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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron..:
Park, Wan-Soo
;
Jo, Hyeon-Bhin
;
Kim, Hyo-Jin
...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2081-2089 , 2023
Link:
https://doi.org/10.1109/ted.2022.3231576
RT Journal T1 <Title>Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3231576&Exemplar=1&LAN=DE A1 Park, Wan-Soo A1 Jo, Hyeon-Bhin A1 Kim, Hyo-Jin A1 Choi, Su-Min A1 Yoo, Ji-Hoon A1 Jeong, Hyeon-Seok A1 George, Sethu A1 Baek, Ji-Min A1 Lee, In-Geun A1 Kim, Tae-Woo A1 Kim, Sang-Kuk A1 Yun, Jacob A1 Kim, Ted A1 Tsutsumi, Takuya A1 Sugiyama, Hiroki A1 Matsuzaki, Hideaki A1 Lee, Jae-Hak A1 Kim, Dae-Hyun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 4 SP 2081 OP 2089 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3231576 DO https://doi.org/10.1109/ted.2022.3231576 SF ELIB - SuUB Bremen
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