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Electric Field Modulation in the Channel by Lateral Thickne..:
Miyamoto, Yasuyuki
;
Makiyama, Kozo
IEEE Transactions on Electron Devices. 70 (2023) 5 - p. 2210-2215 , 2023
Link:
https://doi.org/10.1109/ted.2023.3253823
RT Journal T1 <Title>Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3253823&Exemplar=1&LAN=DE A1 Miyamoto, Yasuyuki A1 Makiyama, Kozo PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 5 SP 2210 OP 2215 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3253823 DO https://doi.org/10.1109/ted.2023.3253823 SF ELIB - SuUB Bremen
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