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1 Ergebnisse
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Substrate Biasing Effect in a High-Voltage Monolithically-I..:
Wang, Da
;
Zheng, Li
;
Cheng, Xinhong
...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 2975-2980 , 2023
Link:
https://doi.org/10.1109/ted.2023.3266716
RT Journal T1 <Title>Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3266716&Exemplar=1&LAN=DE A1 Wang, Da A1 Zheng, Li A1 Cheng, Xinhong A1 Shen, Lingyan A1 Liu, Xiaobo A1 Liu, Shaoyu A1 Tian, Yufei A1 Feng, Junhong A1 Yu, Yuehui PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 6 SP 2975 OP 2980 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3266716 DO https://doi.org/10.1109/ted.2023.3266716 SF ELIB - SuUB Bremen
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