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1 Ergebnisse
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Coexistence of Interfacial and Filamentary Resistance Switc..:
Roy, S.
;
Chakrabarti, B.
;
Bhattacharya, E.
IEEE Transactions on Electron Devices. 70 (2023) 10 - p. 5421-5427 , 2023
Link:
https://doi.org/10.1109/ted.2023.3305580
RT Journal T1 <Title>Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO x/Au Resistive Memory Devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3305580&Exemplar=1&LAN=DE A1 Roy, S. A1 Chakrabarti, B. A1 Bhattacharya, E. PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 10 SP 5421 OP 5427 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3305580 DO https://doi.org/10.1109/ted.2023.3305580 SF ELIB - SuUB Bremen
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