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A Generic Framework for MOSFET Reliability—Part II: Gate an..:
Mahapatra, Souvik
;
Diwakar, Himanshu
;
Thakor, Karansingh
...
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 126-137 , 2024
Link:
https://doi.org/10.1109/ted.2023.3308526
RT Journal T1
A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3308526&Exemplar=1&LAN=DE A1 Mahapatra, Souvik A1 Diwakar, Himanshu A1 Thakor, Karansingh A1 Choudhury, Nilotpal A1 Chatterjee, Payel A1 Kumar, Satyam A1 Singhal, Udit A1 Sharma, Uma PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 1 SP 126 OP 137 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3308526 DO https://doi.org/10.1109/ted.2023.3308526 SF ELIB - SuUB Bremen
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