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1 Ergebnisse
1
Ge/GaAs Heterostructure TFET With Schottky Contact to Suppr..:
Lin, Jyi-Tsong
;
Ho, Hong-Syue
IEEE Transactions on Electron Devices. 70 (2023) 11 - p. 6049-6056 , 2023
Link:
https://doi.org/10.1109/ted.2023.3318522
RT Journal T1 <Title>Ge/GaAs Heterostructure TFET With Schottky Contact to Suppress Ambipolar and Trap-Assisted Tunneling</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3318522&Exemplar=1&LAN=DE A1 Lin, Jyi-Tsong A1 Ho, Hong-Syue PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 11 SP 6049 OP 6056 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3318522 DO https://doi.org/10.1109/ted.2023.3318522 SF ELIB - SuUB Bremen
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