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1 Ergebnisse
1
Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Tr..:
Daus, Alwin
;
Hoang, Lauren
;
Gilardi, Carlo
...
IEEE Transactions on Electron Devices. 70 (2023) 11 - p. 5685-5689 , 2023
Link:
https://doi.org/10.1109/ted.2023.3319300
RT Journal T1 <Title>Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3319300&Exemplar=1&LAN=DE A1 Daus, Alwin A1 Hoang, Lauren A1 Gilardi, Carlo A1 Wahid, Sumaiya A1 Kwon, Jimin A1 Qin, Shengjun A1 Ko, Jung-Soo A1 Islam, Mahnaz A1 Kumar, Aravindh A1 Neilson, Kathryn M. A1 Saraswat, Krishna C. A1 Mitra, Subhasish A1 Wong, H.-S. Philip A1 Pop, Eric PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 70 IS 11 SP 5685 OP 5689 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3319300 DO https://doi.org/10.1109/ted.2023.3319300 SF ELIB - SuUB Bremen
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