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1 Ergebnisse
1
Investigation on Degradation of 1200-V Planar and Trench Si..:
Zhan, Xinbin
;
He, Yanjing
;
Lai, Jiankun
...
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 709-714 , 2024
Link:
https://doi.org/10.1109/ted.2023.3335892
RT Journal T1 <Title>Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3335892&Exemplar=1&LAN=DE A1 Zhan, Xinbin A1 He, Yanjing A1 Lai, Jiankun A1 Yuan, Hao A1 Song, Qingwen A1 Tang, Xiaoyan A1 Gong, Xiaowu A1 Zhang, Yuming PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 1 SP 709 OP 714 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3335892 DO https://doi.org/10.1109/ted.2023.3335892 SF ELIB - SuUB Bremen
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