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1 Ergebnisse
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Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMT..:
Wang, Xiaoming
;
Chen, Wanjun
;
Sun, Ruize
...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1694-1701 , 2024
Link:
https://doi.org/10.1109/ted.2023.3345258
RT Journal T1 <Title>Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2023.3345258&Exemplar=1&LAN=DE A1 Wang, Xiaoming A1 Chen, Wanjun A1 Sun, Ruize A1 Liu, Chao A1 Chen, Xinghuan A1 Xia, Yun A1 Xu, Xiaorui A1 Wang, Zhuocheng A1 Luo, Pan A1 Zhang, Yuhao A1 Zhang, Bo PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 3 SP 1694 OP 1701 LK http://dx.doi.org/https://doi.org/10.1109/ted.2023.3345258 DO https://doi.org/10.1109/ted.2023.3345258 SF ELIB - SuUB Bremen
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