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1 Ergebnisse
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Realizing High Stability of Threshold Voltage in NiO/β-Ga2O..:
Jiang, Zhuolin
;
Deng, Hongru
;
Zhou, Xuanze
...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1598-1605 , 2024
Link:
https://doi.org/10.1109/ted.2024.3359158
RT Journal T1 <Title>Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging Technology</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3359158&Exemplar=1&LAN=DE A1 Jiang, Zhuolin A1 Deng, Hongru A1 Zhou, Xuanze A1 Li, Xiangnan A1 Wei, Yuxi A1 Wei, Jie A1 Liu, Qi A1 Hao, Weibing A1 Xu, Guangwei A1 Long, Shibing A1 Luo, Xiaorong PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 3 SP 1598 OP 1605 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3359158 DO https://doi.org/10.1109/ted.2024.3359158 SF ELIB - SuUB Bremen
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