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1 Ergebnisse
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Research Progress on Radiation Damage Mechanism of SiC MOSF..:
Zeng, Qi
;
Yang, Zhichao
;
Wang, Xingfu
..
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1718-1727 , 2024
Link:
https://doi.org/10.1109/ted.2024.3359172
RT Journal T1 <Title>Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3359172&Exemplar=1&LAN=DE A1 Zeng, Qi A1 Yang, Zhichao A1 Wang, Xingfu A1 Li, Shuti A1 Gao, Fangliang PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 3 SP 1718 OP 1727 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3359172 DO https://doi.org/10.1109/ted.2024.3359172 SF ELIB - SuUB Bremen
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