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1 Ergebnisse
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Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DR..:
Xiong, Wen
;
Luo, Binbin
;
Meng, Wei
...
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2393-2398 , 2024
Link:
https://doi.org/10.1109/ted.2024.3365457
RT Journal T1 <Title>Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3365457&Exemplar=1&LAN=DE A1 Xiong, Wen A1 Luo, Binbin A1 Meng, Wei A1 Wu, Xiaohan A1 Zhu, Bao A1 Ding, Shi-Jin PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 4 SP 2393 OP 2398 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3365457 DO https://doi.org/10.1109/ted.2024.3365457 SF ELIB - SuUB Bremen
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