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1 Ergebnisse
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Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or..:
Liang, Ye
;
Zhang, Yuanlei
;
He, Xiuyuan
...
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 2914-2919 , 2024
Link:
https://doi.org/10.1109/ted.2024.3372933
RT Journal T1 <Title>Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3372933&Exemplar=1&LAN=DE A1 Liang, Ye A1 Zhang, Yuanlei A1 He, Xiuyuan A1 Zhao, Yinchao A1 Yan, Jiudun A1 Wang, Mingxiang A1 Liu, Wen PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 5 SP 2914 OP 2919 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3372933 DO https://doi.org/10.1109/ted.2024.3372933 SF ELIB - SuUB Bremen
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