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Rational Design of Different Ga Content Bilayer InGaZnO Thi..:
Nurmamat, Patigul
;
Abliz, Ablat
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 3032-3038 , 2024
Link:
https://doi.org/10.1109/ted.2024.3383429
RT Journal T1 <Title>Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al₂O₃/HfO₂ Passivation Layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3383429&Exemplar=1&LAN=DE A1 Nurmamat, Patigul A1 Abliz, Ablat PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 5 SP 3032 OP 3038 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3383429 DO https://doi.org/10.1109/ted.2024.3383429 SF ELIB - SuUB Bremen
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