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Report of GaN HEMTs on 8-in Sapphire:
Wang, Junbo
;
Li, Xiangdong
;
Chen, Long
...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4429-4432 , 2024
Link:
https://doi.org/10.1109/ted.2024.3403791
RT Journal T1 <Title>Report of GaN HEMTs on 8-in Sapphire</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3403791&Exemplar=1&LAN=DE A1 Wang, Junbo A1 Li, Xiangdong A1 Chen, Long A1 Liu, Tong A1 Han, Zhanfei A1 You, Shuzhen A1 Wang, Lezhi A1 Li, Zilan A1 Hao, Yue A1 Zhang, Jincheng PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 7 SP 4429 OP 4432 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3403791 DO https://doi.org/10.1109/ted.2024.3403791 SF ELIB - SuUB Bremen
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