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Characterization of Threshold Voltage Shift in SiC MOSFETs ..:
Jiang, Junsong
;
Tang, Xi
;
Tan, Kun
...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4227-4232 , 2024
Link:
https://doi.org/10.1109/ted.2024.3403956
RT Journal T1 <Title>Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2024.3403956&Exemplar=1&LAN=DE A1 Jiang, Junsong A1 Tang, Xi A1 Tan, Kun A1 Hu, Zhihao A1 Tian, Mohan A1 Xu, Yichen A1 Li, Haoran A1 Zhu, Wenjie A1 Li, Hui A1 Hu, Cungang A1 Cao, Wenping PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 71 IS 7 SP 4227 OP 4232 LK http://dx.doi.org/https://doi.org/10.1109/ted.2024.3403956 DO https://doi.org/10.1109/ted.2024.3403956 SF ELIB - SuUB Bremen
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