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1 Ergebnisse
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Mitigation of Single-Event Upset Sensitivity for 6T SRAM in..:
Wang, Yuchong
;
Chen, Siyuan
;
Liu, Fanyu
...
IEEE Transactions on Nuclear Science. 71 (2024) 4 - p. 785-792 , 2024
Link:
https://doi.org/10.1109/tns.2023.3333877
RT Journal T1 <Title>Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 μm DSOI Technology Considering High LET Heavy Ions Irradiation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tns.2023.3333877&Exemplar=1&LAN=DE A1 Wang, Yuchong A1 Chen, Siyuan A1 Liu, Fanyu A1 Gao, Jiantou A1 Li, Bo A1 Li, Binhong A1 Huang, Yang A1 Li, Jiangjiang A1 Wang, Chunlin A1 Wang, Linfei A1 Cui, Pengyu A1 Ma, Shanshan A1 Liao, Yiru A1 Chen, Mengting A1 Wang, Tianqi A1 Liu, Jianli A1 Huang, Chuan A1 Zhao, Peixiong A1 Liu, Jie A1 Han, Zhengsheng A1 Ye, Tianchun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9499 SN 1558-1578 JF IEEE Transactions on Nuclear Science VO 71 IS 4 SP 785 OP 792 LK http://dx.doi.org/https://doi.org/10.1109/tns.2023.3333877 DO https://doi.org/10.1109/tns.2023.3333877 SF ELIB - SuUB Bremen
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