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1 Ergebnisse
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An SEGR Hardened by Design Charge Pump for MTP Memories:
Ren, Pengxu
;
Li, Jiancheng
;
Li, Gang
...
IEEE Transactions on Nuclear Science. 71 (2024) 5 - p. 1218-1224 , 2024
Link:
https://doi.org/10.1109/tns.2024.3388207
RT Journal T1 <Title>An SEGR Hardened by Design Charge Pump for MTP Memories</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tns.2024.3388207&Exemplar=1&LAN=DE A1 Ren, Pengxu A1 Li, Jiancheng A1 Li, Gang A1 Jiang, Xiaoyun A1 Xiao, Yu A1 Tang, Minghua PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9499 SN 1558-1578 JF IEEE Transactions on Nuclear Science VO 71 IS 5 SP 1218 OP 1224 LK http://dx.doi.org/https://doi.org/10.1109/tns.2024.3388207 DO https://doi.org/10.1109/tns.2024.3388207 SF ELIB - SuUB Bremen
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