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1 Ergebnisse
1
Analysis of Displacement Damage Induced by Silicon-Ion Irra..:
Wu, Lei
;
Dong, Shangli
;
Liu, Fengkai
...
IEEE Transactions on Nuclear Science. 71 (2024) 7 - p. 1370-1379 , 2024
Link:
https://doi.org/10.1109/tns.2024.3408466
RT Journal T1
Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tns.2024.3408466&Exemplar=1&LAN=DE A1 Wu, Lei A1 Dong, Shangli A1 Liu, Fengkai A1 Liu, Zhongli A1 Wei, Yadong A1 Li, Weiqi A1 Xu, Xiaodong A1 Yang, Jianqun A1 Li, Xingji PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9499 SN 1558-1578 JF IEEE Transactions on Nuclear Science VO 71 IS 7 SP 1370 OP 1379 LK http://dx.doi.org/https://doi.org/10.1109/tns.2024.3408466 DO https://doi.org/10.1109/tns.2024.3408466 SF ELIB - SuUB Bremen
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