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1 Ergebnisse
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Negative Gate Bias Induced Dynamic ON-Resistance Degradatio..:
Jiang, Zuoheng
;
Hua, Mengyuan
;
Huang, Xinran
...
IEEE Transactions on Power Electronics. 37 (2022) 5 - p. 6018-6025 , 2022
Link:
https://doi.org/10.1109/tpel.2021.3130767
RT Journal T1 <Title>Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tpel.2021.3130767&Exemplar=1&LAN=DE A1 Jiang, Zuoheng A1 Hua, Mengyuan A1 Huang, Xinran A1 Li, Lingling A1 Wang, Chengcai A1 Chen, Junting A1 Chen, Kevin J. PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0885-8993 SN 1941-0107 JF IEEE Transactions on Power Electronics VO 37 IS 5 SP 6018 OP 6025 LK http://dx.doi.org/https://doi.org/10.1109/tpel.2021.3130767 DO https://doi.org/10.1109/tpel.2021.3130767 SF ELIB - SuUB Bremen
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