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Measurement of Circuit Parasitics of SiC MOSFET in a Half-B..:
Roy, Shamibrota Kishore
;
Basu, Kaushik
IEEE Transactions on Power Electronics. 37 (2022) 10 - p. 11911-11926 , 2022
Link:
https://doi.org/10.1109/tpel.2022.3176114
RT Journal T1 <Title>Measurement of Circuit Parasitics of SiC MOSFET in a Half-Bridge Configuration</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tpel.2022.3176114&Exemplar=1&LAN=DE A1 Roy, Shamibrota Kishore A1 Basu, Kaushik PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0885-8993 SN 1941-0107 JF IEEE Transactions on Power Electronics VO 37 IS 10 SP 11911 OP 11926 LK http://dx.doi.org/https://doi.org/10.1109/tpel.2022.3176114 DO https://doi.org/10.1109/tpel.2022.3176114 SF ELIB - SuUB Bremen
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