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An Improved GHA-Enabled Steady State Model-Derived Semicond..:
Mungekar, Shubham
;
Mallik, Ayan
IEEE Transactions on Power Electronics. 39 (2024) 6 - p. 7654-7674 , 2024
Link:
https://doi.org/10.1109/tpel.2024.3373514
RT Journal T1 <Title>An Improved GHA-Enabled Steady State Model-Derived Semiconductor Loss Optimization for a Three-Port C3L3 Resonant Converter</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tpel.2024.3373514&Exemplar=1&LAN=DE A1 Mungekar, Shubham A1 Mallik, Ayan PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0885-8993 SN 1941-0107 JF IEEE Transactions on Power Electronics VO 39 IS 6 SP 7654 OP 7674 LK http://dx.doi.org/https://doi.org/10.1109/tpel.2024.3373514 DO https://doi.org/10.1109/tpel.2024.3373514 SF ELIB - SuUB Bremen
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