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1 Ergebnisse
1
A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline a..:
Pasandi, Ghasem
;
Fakhraie, Sied Mehdi
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23 (2015) 11 - p. 2438-2446 , 2015
Link:
https://doi.org/10.1109/tvlsi.2014.2377518
RT Journal T1
A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tvlsi.2014.2377518&Exemplar=1&LAN=DE A1 Pasandi, Ghasem A1 Fakhraie, Sied Mehdi PB Institute of Electrical and Electronics Engineers (IEEE) YR 2015 SN 1063-8210 SN 1557-9999 JF IEEE Transactions on Very Large Scale Integration (VLSI) Systems VO 23 IS 11 SP 2438 OP 2446 LK http://dx.doi.org/https://doi.org/10.1109/tvlsi.2014.2377518 DO https://doi.org/10.1109/tvlsi.2014.2377518 SF ELIB - SuUB Bremen
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