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1 Ergebnisse
1
A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed..:
Zheng, Yifei
;
Li, Boyu
;
Dong, Qianheng
...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 32 (2024) 3 - p. 542-551 , 2024
Link:
https://doi.org/10.1109/tvlsi.2023.3335137
RT Journal T1 <Title>A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dVS/dt Noise Immunity Enhancement Structure</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tvlsi.2023.3335137&Exemplar=1&LAN=DE A1 Zheng, Yifei A1 Li, Boyu A1 Dong, Qianheng A1 Ying, Yutao A1 Song, Deyuan A1 Zhu, Jing A1 Sun, Weifeng A1 Qian, Qinsong A1 Zhang, Long A1 Li, Sheng A1 Wang, Denggui A1 Zhou, Jianjun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 1063-8210 SN 1557-9999 JF IEEE Transactions on Very Large Scale Integration (VLSI) Systems VO 32 IS 3 SP 542 OP 551 LK http://dx.doi.org/https://doi.org/10.1109/tvlsi.2023.3335137 DO https://doi.org/10.1109/tvlsi.2023.3335137 SF ELIB - SuUB Bremen
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