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1 Ergebnisse
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Electrical properties of silicon, heat-treated at 530 °C wi..:
Neimash, V. B.
;
Siratskii, V. M.
;
Krachinskii, A. N.
.
Semiconductors. 32 (1998) 9 - p. 939-943 , 1998
Link:
https://doi.org/10.1134/1.1187518
RT Journal T1
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
UL https://suche.suub.uni-bremen.de/peid=cr-10.1134_1.1187518&Exemplar=1&LAN=DE A1 Neimash, V. B. A1 Siratskii, V. M. A1 Krachinskii, A. N. A1 Puzenko, E. A. PB Pleiades Publishing Ltd YR 1998 SN 1063-7826 SN 1090-6479 JF Semiconductors VO 32 IS 9 SP 939 OP 943 LK http://dx.doi.org/https://doi.org/10.1134/1.1187518 DO https://doi.org/10.1134/1.1187518 SF ELIB - SuUB Bremen
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