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Quantum Capacitance of a Dual-Gate Field-Effect Transistor:
Fedorov, I. B.
;
Dorozhkin, S. I.
;
Kapustin, A. A.
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15 (2021) 6 - p. 1168-1173 , 2021
Link:
https://doi.org/10.1134/s1027451021060070
RT Journal T1 <Title>Quantum Capacitance of a Dual-Gate Field-Effect Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1134_s1027451021060070&Exemplar=1&LAN=DE A1 Fedorov, I. B. A1 Dorozhkin, S. I. A1 Kapustin, A. A. PB Pleiades Publishing Ltd YR 2021 SN 1027-4510 SN 1819-7094 JF Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques VO 15 IS 6 SP 1168 OP 1173 LK http://dx.doi.org/https://doi.org/10.1134/s1027451021060070 DO https://doi.org/10.1134/s1027451021060070 SF ELIB - SuUB Bremen
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