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Influence of parameters of the semiconductor–dielectric int..:
Demidov, S. S.
;
Klimanov, E. A.
Journal of Communications Technology and Electronics. 61 (2016) 3 - p. 328-332 , 2016
Link:
https://doi.org/10.1134/s1064226916030074
RT Journal T1 <Title>Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1134_s1064226916030074&Exemplar=1&LAN=DE A1 Demidov, S. S. A1 Klimanov, E. A. PB Pleiades Publishing Ltd YR 2016 SN 1064-2269 SN 1555-6557 JF Journal of Communications Technology and Electronics VO 61 IS 3 SP 328 OP 332 LK http://dx.doi.org/https://doi.org/10.1134/s1064226916030074 DO https://doi.org/10.1134/s1064226916030074 SF ELIB - SuUB Bremen
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