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Current–Voltage Characteristics of n-B-p Structures with Ab..:
Sednev, M. V.
;
Boltar, K. O.
;
Irodov, N. A.
.
Journal of Communications Technology and Electronics. 63 (2018) 9 - p. 1119-1126 , 2018
Link:
https://doi.org/10.1134/s1064226918090188
RT Journal T1 <Title>Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1134_s1064226918090188&Exemplar=1&LAN=DE A1 Sednev, M. V. A1 Boltar, K. O. A1 Irodov, N. A. A1 Demidov, S. S. PB Pleiades Publishing Ltd YR 2018 SN 1064-2269 SN 1555-6557 JF Journal of Communications Technology and Electronics VO 63 IS 9 SP 1119 OP 1126 LK http://dx.doi.org/https://doi.org/10.1134/s1064226918090188 DO https://doi.org/10.1134/s1064226918090188 SF ELIB - SuUB Bremen
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