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1 Ergebnisse
1
High Al Composition AlGaN-Channel High-Electron-Mobility Tr..:
Tokuda, Hirokuni
;
Hatano, Maiko
;
Yafune, Norimasa
...
Applied Physics Express. 3 (2010) 12 - p. 121003 , 2010
Link:
https://doi.org/10.1143/apex.3.121003
RT Journal T1
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_apex.3.121003&Exemplar=1&LAN=DE A1 Tokuda, Hirokuni A1 Hatano, Maiko A1 Yafune, Norimasa A1 Hashimoto, Shin A1 Akita, Katsushi A1 Yamamoto, Yoshiyuki A1 Kuzuhara, Masaaki PB IOP Publishing YR 2010 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 3 IS 12 SP 121003 LK http://dx.doi.org/https://doi.org/10.1143/apex.3.121003 DO https://doi.org/10.1143/apex.3.121003 SF ELIB - SuUB Bremen
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