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Deep Impurity Levels of Cobalt in Silicon:
Nakashima, Hiroshi
;
Tsumori, Yasuo
;
Miyagawa, Tsuyoshi
.
Japanese Journal of Applied Physics. 29 (1990) 8R - p. 1395 , 1990
Link:
https://doi.org/10.1143/jjap.29.1395
RT Journal T1 <Title>Deep Impurity Levels of Cobalt in Silicon</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.29.1395&Exemplar=1&LAN=DE A1 Nakashima, Hiroshi A1 Tsumori, Yasuo A1 Miyagawa, Tsuyoshi A1 Hashimoto, Kimio PB IOP Publishing YR 1990 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 29 IS 8R SP 1395 LK http://dx.doi.org/https://doi.org/10.1143/jjap.29.1395 DO https://doi.org/10.1143/jjap.29.1395 SF ELIB - SuUB Bremen
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