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1 Ergebnisse
1
GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn..:
Wada, Morio
;
Seko, Mashahito
;
Sakakibara, Katsutoshi
.
Japanese Journal of Applied Physics. 29 (1990) 3A - p. L401 , 1990
Link:
https://doi.org/10.1143/jjap.29.l401
RT Journal T1
GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.29.l401&Exemplar=1&LAN=DE A1 Wada, Morio A1 Seko, Mashahito A1 Sakakibara, Katsutoshi A1 Sekiguchi, Yoichi PB IOP Publishing YR 1990 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 29 IS 3A SP L401 LK http://dx.doi.org/https://doi.org/10.1143/jjap.29.l401 DO https://doi.org/10.1143/jjap.29.l401 SF ELIB - SuUB Bremen
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