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Behavior of Al on Clean and Oxidized GaAs(110) Surfaces:
Hyunwoo Kim, Hyunwoo Kim
Japanese Journal of Applied Physics. 32 (1993) 4R - p. 1794 , 1993
Link:
https://doi.org/10.1143/jjap.32.1794
RT Journal T1 <Title>Behavior of Al on Clean and Oxidized GaAs(110) Surfaces</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.32.1794&Exemplar=1&LAN=DE A1 Hyunwoo Kim, Hyunwoo Kim PB IOP Publishing YR 1993 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 32 IS 4R SP 1794 LK http://dx.doi.org/https://doi.org/10.1143/jjap.32.1794 DO https://doi.org/10.1143/jjap.32.1794 SF ELIB - SuUB Bremen
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