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1 Ergebnisse
1
Etching of InAs in HCl Gas and Selective Removal of InAs La..:
Kadoya, Yutaka
;
Yoshida, Takashi
;
Someya, Takao
...
Japanese Journal of Applied Physics. 32 (1993) 10B - p. L1496 , 1993
Link:
https://doi.org/10.1143/jjap.32.l1496
RT Journal T1
Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.32.l1496&Exemplar=1&LAN=DE A1 Kadoya, Yutaka A1 Yoshida, Takashi A1 Someya, Takao A1 Akiyama, Hidefumi A1 Noge, Hiroshi A1 Sakaki, Hiroyuki PB IOP Publishing YR 1993 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 32 IS 10B SP L1496 LK http://dx.doi.org/https://doi.org/10.1143/jjap.32.l1496 DO https://doi.org/10.1143/jjap.32.l1496 SF ELIB - SuUB Bremen
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