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1 Ergebnisse
1
Silicon-Based Single-Electron-Tunneling TransistorOperated ..:
Akiko Ohata, Akiko Ohata
;
Hiromi Niiyama, Hiromi Niiyama
;
Toru Shibata, Toru Shibata
..
Japanese Journal of Applied Physics. 34 (1995) 8S - p. 4485 , 1995
Link:
https://doi.org/10.1143/jjap.34.4485
RT Journal T1
Silicon-Based Single-Electron-Tunneling TransistorOperated at 4.2 K
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.34.4485&Exemplar=1&LAN=DE A1 Akiko Ohata, Akiko Ohata A1 Hiromi Niiyama, Hiromi Niiyama A1 Toru Shibata, Toru Shibata A1 Kazuaki Nakajima, Kazuaki Nakajima A1 Akira Toriumi, Akira Toriumi PB IOP Publishing YR 1995 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 34 IS 8S SP 4485 LK http://dx.doi.org/https://doi.org/10.1143/jjap.34.4485 DO https://doi.org/10.1143/jjap.34.4485 SF ELIB - SuUB Bremen
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