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1 Ergebnisse
1
Electrical Properties of Heavily Carbon-Doped GaAs Epilayer..:
Son, Chang-Sik
;
Kim, Seong-Il
;
Min, Byung-Don
...
Japanese Journal of Applied Physics. 35 (1996) 12S - p. 6562 , 1996
Link:
https://doi.org/10.1143/jjap.35.6562
RT Journal T1
Electrical Properties of Heavily Carbon-Doped GaAs EpilayersGrown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr 4
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.35.6562&Exemplar=1&LAN=DE A1 Son, Chang-Sik A1 Kim, Seong-Il A1 Min, Byung-Don A1 Kim, Yong A1 Kim, Eun Kyu A1 Min, Suk-Ki A1 Choi, In-Hoon PB IOP Publishing YR 1996 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 35 IS 12S SP 6562 LK http://dx.doi.org/https://doi.org/10.1143/jjap.35.6562 DO https://doi.org/10.1143/jjap.35.6562 SF ELIB - SuUB Bremen
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