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1 Ergebnisse
1
Selective Area Growth of GaN on Si Substrate Using SiO 2 Ma..:
Yasutoshi Kawaguchi, Yasutoshi Kawaguchi
;
Yoshio Honda, Yoshio Honda
;
Hidetada Matsushima, Hidetada Matsushima
...
Japanese Journal of Applied Physics. 37 (1998) 8B - p. L966 , 1998
Link:
https://doi.org/10.1143/jjap.37.l966
RT Journal T1
Selective Area Growth of GaN on Si Substrate Using SiO 2 Maskby Metalorganic Vapor Phase Epitaxy
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.37.l966&Exemplar=1&LAN=DE A1 Yasutoshi Kawaguchi, Yasutoshi Kawaguchi A1 Yoshio Honda, Yoshio Honda A1 Hidetada Matsushima, Hidetada Matsushima A1 Masahito Yamaguchi, Masahito Yamaguchi A1 Kazumasa Hiramatsu, Kazumasa Hiramatsu A1 Nobuhiko Sawaki, Nobuhiko Sawaki PB IOP Publishing YR 1998 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 37 IS 8B SP L966 LK http://dx.doi.org/https://doi.org/10.1143/jjap.37.l966 DO https://doi.org/10.1143/jjap.37.l966 SF ELIB - SuUB Bremen
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