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1 Ergebnisse
1
Improvement of Memory Retention Characteristics in Ferroele..:
Sung-Min Yoon, Sung-Min Yoon
;
Eisuke Tokumitsu, Eisuke Tokumitsu
;
Hiroshi Ishiwara, Hiroshi Ishiwara
Japanese Journal of Applied Physics. 39 (2000) 4S - p. 2119 , 2000
Link:
https://doi.org/10.1143/jjap.39.2119
RT Journal T1
Improvement of Memory Retention Characteristics in Ferroelectric Neuron CircuitsUsing a Pt/SrBi 2Ta 2O 9/Pt/Ti/SiO 2/Si Structure-Field Effect Transistor as a Synapse Device
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.39.2119&Exemplar=1&LAN=DE A1 Sung-Min Yoon, Sung-Min Yoon A1 Eisuke Tokumitsu, Eisuke Tokumitsu A1 Hiroshi Ishiwara, Hiroshi Ishiwara PB IOP Publishing YR 2000 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 39 IS 4S SP 2119 LK http://dx.doi.org/https://doi.org/10.1143/jjap.39.2119 DO https://doi.org/10.1143/jjap.39.2119 SF ELIB - SuUB Bremen
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