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1 Ergebnisse
1
Parasitic Resistance Reduction in Deep Submicron Dual-Gate ..:
Sugihara, Kohei
;
Miura, Naruhisa
;
Furukawa, Taisuke
...
Japanese Journal of Applied Physics. 39 (2000) 2R - p. 387 , 2000
Link:
https://doi.org/10.1143/jjap.39.387
RT Journal T1
Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with PartiallyElevated Source/Drain Extension Regions Fabricated by ComplementaryMetal-Oxide-Semiconductor Technologies
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.39.387&Exemplar=1&LAN=DE A1 Sugihara, Kohei A1 Miura, Naruhisa A1 Furukawa, Taisuke A1 Nakahata, Takumi A1 Nishioka, Yasutaka A1 Yamakawa, Satoshi A1 Abe, Yuji A1 Maruno, Shigemitsu A1 Tokuda, Yasunori PB IOP Publishing YR 2000 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 39 IS 2R SP 387 LK http://dx.doi.org/https://doi.org/10.1143/jjap.39.387 DO https://doi.org/10.1143/jjap.39.387 SF ELIB - SuUB Bremen
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