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1 Ergebnisse
1
Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10G..:
Otsuka, Nobuyuki
;
Tsujimura, Ayumu
;
Hasegawa, Yoshiaki
...
Japanese Journal of Applied Physics. 39 (2000) 5B - p. L445 , 2000
Link:
https://doi.org/10.1143/jjap.39.l445
RT Journal T1
Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.39.l445&Exemplar=1&LAN=DE A1 Otsuka, Nobuyuki A1 Tsujimura, Ayumu A1 Hasegawa, Yoshiaki A1 Sugahara, Gaku A1 Kume, Masahiro A1 Ban, Yuzaburoh PB IOP Publishing YR 2000 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 39 IS 5B SP L445 LK http://dx.doi.org/https://doi.org/10.1143/jjap.39.l445 DO https://doi.org/10.1143/jjap.39.l445 SF ELIB - SuUB Bremen
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