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1 Ergebnisse
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Enhancement-Mode InGaAs/InAlAs/InP High Electon Mobility Tr..:
Grundbacher, Ronald
;
Lai, Richard
;
Barsky, Michael
...
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 2B - p. 1108-1110 , 2002
Link:
https://doi.org/10.1143/jjap.41.1108
RT Journal T1 <Title>Enhancement-Mode InGaAs/InAlAs/InP High Electon Mobility Transistor with 0.1 µm Gate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.41.1108&Exemplar=1&LAN=DE A1 Grundbacher, Ronald A1 Lai, Richard A1 Barsky, Michael A1 Tsai, Roger A1 Dia, Rosalinda A1 Chou, Yeong-Chang A1 Tran, Liem A1 Cavus, Abdullah A1 Block, Thomas A1 Oki, Aaron PB IOP Publishing YR 2002 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 41 IS Part 1, No. 2B SP 1108 OP 1110 LK http://dx.doi.org/https://doi.org/10.1143/jjap.41.1108 DO https://doi.org/10.1143/jjap.41.1108 SF ELIB - SuUB Bremen
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