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50–200 GHz Silicon–Germanium Heterojunction Bipolar Transis..:

Subbanna, Seshadri ; Freeman, Gregory ; Rieh, Jae-Sung...
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 2B - p. 1111-1123 , 2002

Link: https://doi.org/10.1143/jjap.41.1111

RT Journal
T1 <Title>50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2–50+ GHz Very Large-Scale Integration Mixed-Signal ICs</Title>

UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.41.1111&Exemplar=1&LAN=DE
				
A1 Subbanna, Seshadri
A1 Freeman, Gregory
A1 Rieh, Jae-Sung
A1 Ahlgren, David
A1 Stein, Kenneth
A1 Dickey, Carl
A1 Mecke, James
A1 Bacon, Peter
A1 Groves, Robert
A1 Meghelli, Mounir
A1 Soyuer, Mehmet
A1 Jagannathan, Basanth
A1 Schonenberg, Kathryn
A1 Jeng, Shwu-Jen
A1 Joseph, Alvin
A1 Coolbaugh, Douglas
A1 Volant, Richard
A1 Greenberg, David
A1 Chen, Huajie
A1 Brelsford, Kevin
A1 Harame, David
A1 Dunn, James
A1 Larson, Lawrence
A1 Herman, Dean
A1 Meyerson, Bernard
PB IOP Publishing
YR 2002
SN 0021-4922
SN 1347-4065
JF Japanese Journal of Applied Physics
VO 41
IS Part 1, No. 2B
SP 1111
OP 1123
LK http://dx.doi.org/https://doi.org/10.1143/jjap.41.1111
DO https://doi.org/10.1143/jjap.41.1111
SF ELIB - SuUB Bremen

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