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1 Ergebnisse
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Impact of Polymetal Gate Etch Post-Cleaning on Data Retenti..:
Kim, Nam-Sung
;
Kim, Il-Gweon
;
Choy, Jun-Ho
.
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 4B - p. 2385-2389 , 2002
Link:
https://doi.org/10.1143/jjap.41.2385
RT Journal T1 <Title>Impact of Polymetal Gate Etch Post-Cleaning on Data Retention Time in Sub-micron DRAM Cells</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.41.2385&Exemplar=1&LAN=DE A1 Kim, Nam-Sung A1 Kim, Il-Gweon A1 Choy, Jun-Ho A1 Park, Joo-Seog PB IOP Publishing YR 2002 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 41 IS Part 1, No. 4B SP 2385 OP 2389 LK http://dx.doi.org/https://doi.org/10.1143/jjap.41.2385 DO https://doi.org/10.1143/jjap.41.2385 SF ELIB - SuUB Bremen
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