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1 Ergebnisse
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A Method for Defect Delineation in Silicon Carbide Using Po..:
Bondokov, Robert T.
;
Khlebnikov, Igor I.
;
Lashkov, Tsanko
...
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 12 - p. 7312-7316 , 2002
Link:
https://doi.org/10.1143/jjap.41.7312
RT Journal T1 <Title>A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.41.7312&Exemplar=1&LAN=DE A1 Bondokov, Robert T. A1 Khlebnikov, Igor I. A1 Lashkov, Tsanko A1 Tupitsyn, Eugene A1 Stratiy, Georgiy A1 Khlebnikov, Yuri A1 Sudarshan, Tangali S. PB IOP Publishing YR 2002 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 41 IS Part 1, No. 12 SP 7312 OP 7316 LK http://dx.doi.org/https://doi.org/10.1143/jjap.41.7312 DO https://doi.org/10.1143/jjap.41.7312 SF ELIB - SuUB Bremen
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