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1 Ergebnisse
1
Gate Engineering to Prevent NMOS Dopant Channeling for Nano..:
Park, Sung Hyung
;
Kim, Yong Goo
;
Ji, Hee Hwan
...
Japanese Journal of Applied Physics. 43 (2004) 4S - p. 1709 , 2004
Link:
https://doi.org/10.1143/jjap.43.1709
RT Journal T1
Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.43.1709&Exemplar=1&LAN=DE A1 Park, Sung Hyung A1 Kim, Yong Goo A1 Ji, Hee Hwan A1 Lee, Hi Deok A1 Kim, Jae Sung A1 Baek, Seong Hak A1 Chang, Hoon A1 Lee, Jin Hyuk A1 Kim, Kyoung Cheol A1 Song, Byeung Soo A1 Bae, Hui Koung A1 Kim, Myung Ok A1 Lee, Heui Seung A1 Kang, Young Seok A1 Kim, Dae Byung PB IOP Publishing YR 2004 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 43 IS 4S SP 1709 LK http://dx.doi.org/https://doi.org/10.1143/jjap.43.1709 DO https://doi.org/10.1143/jjap.43.1709 SF ELIB - SuUB Bremen
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