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1 Ergebnisse
1
Electron Transport Properties in Lightly Si-doped InGaN Fil..:
Wang, Chengxin
;
Maeda, Narihiko
;
Tsubaki, Kotaro
..
Japanese Journal of Applied Physics. 43 (2004) 6R - p. 3356 , 2004
Link:
https://doi.org/10.1143/jjap.43.3356
RT Journal T1
Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.43.3356&Exemplar=1&LAN=DE A1 Wang, Chengxin A1 Maeda, Narihiko A1 Tsubaki, Kotaro A1 Kobayashi, Naoki A1 Makimoto, Toshiki PB IOP Publishing YR 2004 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 43 IS 6R SP 3356 LK http://dx.doi.org/https://doi.org/10.1143/jjap.43.3356 DO https://doi.org/10.1143/jjap.43.3356 SF ELIB - SuUB Bremen
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